美国桑迪亚国家实验室电子器件的辐射响应博士后职位招聘

　　Postdoctoral Appointee - Radiation Response of Electronic Devices

　　Sandia National Laboratories

　　Location: Albuquerque, NM

　　Job Number: 7053766 (Ref #: 664238)

　　Posting Date: Oct 16, 2018

　　Job Description

　　This postdoctoral position is a temporary position for up to one year, which may be renewed at Sandia's discretion up to five additional years. The PhD must have been conferred within five years prior to employment. Individuals in postdoctoral positions may bid on regular Sandia positions as internal candidates, and in some cases may be converted to regular career positions during their term if warranted by ongoing operational needs, continuing availability of funds, and satisfactory job performance. : We are seeking a Postdoctoral Appointee to research responses of semiconductors to radiation sources at Sandia's Ion Beam Laboratory (IBL). Are you seeking an opportunity to utilize state-of-the-art facilities and equipment in your research endeavors? Do you want to be part of a dynamic team developing ground breaking capabilities in support of Sandia's diverse mission areas? If so, you will want to consider this opportunity. In this role, you will use a suite of tools including electrical response (gain, photocurrent, reverse leakage, etc.) in conjunction with in-situ deep level transient spectroscopy (DLTS), photoluminescence (PL), electroluminescence (EL), transient microwave reflectance (TMR), electron and ion beam induced charge collection (EBIC and IBIC), etc. to understand defect production and evolution at short-times. In addition, you will partner with a multidisciplinary team including internal and external collaborators. On any given day, you may be called on to: + Support research programs utilizing the novel capabilities of the IBL related to understanding and modeling the radiation response of semiconductor materials and devices. These include the following: + In-situ low temperature characterization using DLTS + In-situ PL, EL and TMR setups + EBIC and IBIC mapping exploring transient single event upsets in CMOS devices + A mixed radiation environment simulator + Support the creation of new capabilities that improve opportunities for high-quality research, particularly developing new techniques to explore and understand defect physics + Collaborate with diverse groups working with a wide array of material deposition techniques, predictive modeling, device fabrication, material testing, and range of other capabilities + Augment the body of knowledge through publication of research results and presenting at relevant technical conferences

　　Required:

　　+ PhD, conferred within 5 years prior to employment, in Electrical Engineering, Physics, Materials Science, or related discipline + Research background in semiconductor materials or devices + Good communication skills as evidenced by a history of publication of results in peer-reviewed journals and external presentations at appropriate scientific conferences + Ability to obtain and maintain a DoE Q clearance

　　Desired:

　　+ Experience with defects in semiconductors, semiconductor device physics, and/or TCAD modeling of devices + Experience using ion beams (100keV – multi-MeV) for materials analysis or modification

　　Department Description:

　　The Radiation-Solid Interaction Department operates the Ion Beam Laboratory (IBL), which has been a key player in understanding radiation effects in microelectronics since the 1950’s and more recently understanding the materials science of defects in solids. These efforts continue to this day with development of in situ surrogate testing capabilities which enable experimentation to determine the early-time response of microelectronic devices to neutron and gamma environments. This experimental data, coupled with fundamental physics-based defect and carrier models, allows us to predict the radiation response of devices and circuits. These state-of-the-art capabilities allow us to explore the fundamental materials science of novel defects in solids down to the fabrication of single atom devices. Over the last decade, Sandia has improved the understanding of silicon and III-V materials. In the coming years, we need to apply our experiment and modeling expertise to the next generation of radiation-hardened CMOS technologies, maturing materials such as III-nitrides, as well as rapidly emerging materials (e.g. gallium oxide). We offer unique experimental and modeling capabilities, a broad range of technologies of interest, and a diverse, multi-disciplinary team. Recently, Sandia has directly improved the field of solid state defect centers and single atom doping by enabling the deterministic creation of single atom devices within nanostructures including optical cavities for enhanced photon coupling in wide bandgap materials and electrical structures for low temperature quantum transport studies in Si MOSFET devices. Our state-of-the-art facility houses 4 major accelerators: a 6 MV Tandem, a 3 MV Pelletron, a 400 kV implanter, and a unique 100 kV nanoImplanter with a 10 nm spot size. Other experimental facilities include micro beam lines on all the major accelerators with spots sizes from 150 nm to 1 um for localized irradiations. Electrical characterization of ion beam induced damage including in-situ deep level transient spectroscopy for defect spectroscopy, in-situ photoluminescence and transient microwave reflectance setups to measure minority carrier lifetimes and a unique mixed radiation environment simulator combining ion and electron irradiations simulating both displacement damage and high dose rate conditions. Optical characterization of light emission from optically active defect centers in diamond, GaN, SiC, etc. using photoluminescence and electroluminescence. The IBL is actively engaged in three major research thrusts: + Understanding the performance of materials in radiation environments. Among these projects we directly impact the performance of microelectronics in space and other hostile environments. + Developing and applying novel ion beam techniques to precisely measure materials compositions. Applications in this area include mapping hydrogen isotopes in fusion wall material, and measuring the composition of thin complex materials such as transition metal oxides. + Exploring the materials science of defects in solids. This broad area includes single ion implants for quantum applications in wide bandgap materials, anomalous grain growth in nanograined materials, hydride formation under irradiation, and nanomechanical responses of materials. In each thrust the department provides exceptional capabilities to multidisciplinary teams with an interest in publishing high quality research and applying the results to problems of national interest.

　　About Sandia:

　　Sandia National Laboratories is the nation’s premier science and engineering lab for national security and technology innovation, with teams of specialists focused on cutting-edge work in a broad array of areas. Some of the main reasons we love our jobs: + Challenging work withamazingimpact that contributes to security, peace, and freedom worldwide + Extraordinary co-workers + Some of the best tools, equipment, and research facilities in the world + Career advancement and enrichment opportunities + Flexible schedules, generous vacations,strongmedical and other benefits, competitive 401k, learning opportunities, relocation assistance and amenities aimed at creating a solid work/life balance* _World-changing technologies. Life-changing careers._ Learn more about Sandia at: http://www.sandia.gov *These benefits vary by job classification.

　　Security Clearance:

　　Position requires a Department of Energy (DOE) granted Q-level security clearance. Sandia is required by DOE directive to conduct a pre-employment drug testing, and a pre-employment background review that includes personal reference checks, law enforcement record and credit checks, and employment and education verifications. Applicants for employment must be able to obtain and maintain a DOE Q-level security clearance, which requires U.S. citizenship. Applicants offered employment with Sandia are subject to a federal background investigation to meet the requirements for access to classified information or matter if the duties of the position require a DOE security clearance. Substance abuse or illegal drug use, falsification of information, criminal activity, serious misconduct or other indicators of untrustworthiness can cause a clearance to be denied or terminated by the DOE, rendering the inability to perform the duties assigned and resulting in termination of employment.

　　EEO Statement:

　　All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, disability, or veteran status.

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